Low

NXP  PSMN0R9-30YLD  MOSFET Transistor, N Channel, 100 A, 30 V, 0.00065 ohm, 10 V, 1.5 V

產品總覽

The PSMN0R9-30YLD is a 30V logic level N-channel Enhancement Mode MOSFET using NextPowerS3 technology. NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. It is particularly suited to high efficiency applications at high switching frequencies. Suitable for on-board DC-to-DC solutions for server and telecommunications and secondary-side synchronous rectification in telecommunication applications.
  • Avalanche rated, 100% tested at I (as) = 190A
  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery, s-factor >1
  • Low spiking and ringing for low EMI designs
  • Optimised for 4.5V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach power SO8 package
  • Wave solderable exposed leads for optimal visual solder inspection

產品訊息

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
650µohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
349W
Transistor Case Style:
SOT-1023
No. of Pins:
4Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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應用

  • Power Management;
  • Industrial;
  • Communications & Networking

法規與環境保護

濕敏等級:
MSL 1 - Unlimited
原產地:
China

承擔產品生產最後程序之國家

符合 RoHS 規定:
關稅編號:
85412900
重量 (公斤):
.00001