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VISHAY  SUD19P06-60-GE3  MOSFET Transistor, P Channel, -18.3 A, -60 V, 0.048 ohm, -10 V, -3 V

VISHAY SUD19P06-60-GE3
Technical Data Sheet (166.93KB) EN 查看所有技術文件

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產品總覽

The SUD19P06-60-GE3 is a -60V P-channel TrenchFET® Power MOSFET. Suitable for DC/DC converters and power switch applications.
  • Halogen-free according to IEC 61249-2-21 definition
  • 100% Rg Tested
  • 100% UIS Tested

產品訊息

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-18.3A
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
0.048ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-3V
Power Dissipation Pd:
38.5W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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應用

  • Power Management

法規與環境保護

濕敏等級:
MSL 1 - Unlimited
原產地:
Taiwan

承擔產品生產最後程序之國家

符合 RoHS 規定:
Y-Ex
關稅編號:
85412900
重量 (公斤):
.000563