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VISHAY  SI7456DDP-T1-GE3  MOSFET Transistor, N Channel, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V

VISHAY SI7456DDP-T1-GE3
Technical Data Sheet (342.00KB) EN 查看所有技術文件

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產品總覽

The SI7456DDP-T1-GE3 is a 100V N-channel TrenchFET® Power MOSFET. Suitable for telecom and server applications. Used in DC/DC primary side switch and synchronous rectification circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
  • Halogen-free according to IEC 61249-2-21 definition
  • 100% Rg Tested
  • 100% UIS Tested

產品訊息

Transistor Polarity:
N Channel
Continuous Drain Current Id:
27.8A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.017ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
35.7W
Transistor Case Style:
PowerPAK SO
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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應用

  • Power Management;
  • Industrial;
  • Communications & Networking

法規與環境保護

濕敏等級:
MSL 1 - Unlimited
原產地:
Taiwan

承擔產品生產最後程序之國家

符合 RoHS 規定:
關稅編號:
85412900
重量 (公斤):
.00012