INFINEON Semiconductors - Discretes

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IPW60R190P6FKSA1
IPW60R190P6FKSA1 - Power MOSFET, N Channel, 600 V, 20.2 A, 0.171 ohm, TO-247, Through Hole

2420505

Power MOSFET, N Channel, 600 V, 20.2 A, 0.171 ohm, TO-247, Through Hole

INFINEON

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N Channel 600V 20.2A 0.171ohm TO-247 Through Hole 10V 4V 151W 3Pins 150°C - -
IPN70R600P7SATMA1
IPN70R600P7SATMA1 - Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, SOT-223, Surface Mount

2986474

Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, SOT-223, Surface Mount

INFINEON

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2986474RL in Re-reel

1+ NT$25.07 10+ NT$21.84 100+ NT$15.14 500+ NT$12.66 1000+ NT$11.12 5000+ NT$9.58 More Pricing...

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N Channel - - - SOT-223 Surface Mount - - - - - CoolMOS P7 -
IPN70R900P7SATMA1
IPN70R900P7SATMA1 - Power MOSFET, N Channel, 700 V, 6 A, 0.74 ohm, SOT-223, Surface Mount

2986475

Power MOSFET, N Channel, 700 V, 6 A, 0.74 ohm, SOT-223, Surface Mount

INFINEON

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Suggested replacement for:2986475
2986475RL in Re-reel

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N Channel - - - SOT-223 Surface Mount - - - - - CoolMOS P7 -
IKZA50N65SS5XKSA1
IKZA50N65SS5XKSA1 - IGBT, 650 V, 80 A, TO-247, Trenchstop 5 S5 Coolsic Gen Vi Series, 274 W

3625313

IGBT, 650 V, 80 A, TO-247, Trenchstop 5 S5 Coolsic Gen Vi Series, 274 W

INFINEON

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- - - - TO-247 Through Hole - - - - - TRENCHSTOP 5 S5 CoolSiC Gen VI -
BFP843FH6327XTSA1
BFP843FH6327XTSA1 - Bipolar - RF Transistor, NPN, 2.6 V, 125 mW, 55 mA, TSFP

2781218

Bipolar - RF Transistor, NPN, 2.6 V, 125 mW, 55 mA, TSFP

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Suggested replacement for:2781218
2781218RL in Re-reel

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- - - - TSFP Surface Mount - - - - - - AEC-Q101
SPA11N65C3XKSA1
SPA11N65C3XKSA1 - Power MOSFET, N Channel, 650 V, 11 A, 0.34 ohm, TO-220F, Through Hole

1471771

Power MOSFET, N Channel, 650 V, 11 A, 0.34 ohm, TO-220F, Through Hole

INFINEON

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- 650V - - - - - - - - - - -
BAS7005E6327HTSA1
BAS7005E6327HTSA1 - Small Signal Diode, Dual Common Cathode, 70 V, 70 mA, 1 V, 100 mA

2443536

Small Signal Diode, Dual Common Cathode, 70 V, 70 mA, 1 V, 100 mA

INFINEON

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5+ NT$7.88 100+ NT$4.75 500+ NT$4.39 1000+ NT$3.25 3000+ NT$2.75 9000+ NT$2.39 24000+ NT$2.34 45000+ NT$2.20 More Pricing...

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- - - - - - - - - - - - -
IRFB7537PBF
IRFB7537PBF - Power MOSFET, N Channel, 60 V, 173 A, 0.00275 ohm, TO-220AB, Through Hole

2406516

Power MOSFET, N Channel, 60 V, 173 A, 0.00275 ohm, TO-220AB, Through Hole

INFINEON

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N Channel - - - TO-220AB Through Hole - - - - - - -
IPP052NE7N3GXKSA1
IPP052NE7N3GXKSA1 - Power MOSFET, N Channel, 75 V, 80 A, 0.0052 ohm, TO-220, Through Hole

2480849

Power MOSFET, N Channel, 75 V, 80 A, 0.0052 ohm, TO-220, Through Hole

INFINEON

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N Channel 75V 80A 0.0052ohm TO-220 Through Hole 10V 3.8V 150W 3Pins 175°C OptiMOS 3 Series -
IMBF170R450M1XTMA1
IMBF170R450M1XTMA1 - Silicon Carbide MOSFET, Single, N Channel, 9.8 A, 1.7 kV, 0.364 ohm, TO-263 (D2PAK)

3577330

Silicon Carbide MOSFET, Single, N Channel, 9.8 A, 1.7 kV, 0.364 ohm, TO-263 (D2PAK)

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1+ NT$251.05 5+ NT$227.70 10+ NT$204.35 50+ NT$191.86 100+ NT$179.36 250+ NT$173.71 More Pricing...

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N Channel - - - TO-263 (D2PAK) - - - - - - - -
FS30R06VE3BOMA1
FS30R06VE3BOMA1 - IGBT Module, Six Pack [Full Bridge], 34 A, 1.55 V, 88 W, 150 °C, Module

2781260

IGBT Module, Six Pack [Full Bridge], 34 A, 1.55 V, 88 W, 150 °C, Module

INFINEON

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1+ NT$1,002.73 5+ NT$963.89 10+ NT$925.05 50+ NT$857.25 100+ NT$789.44

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- - - - Module Panel - - - - - EconoPACK -
IDW30C65D2XKSA1
IDW30C65D2XKSA1 - Fast / Ultrafast Diode, 650 V, 30 A, Dual Common Cathode, 2.2 V, 32 ns, 100 A

2780784

Fast / Ultrafast Diode, 650 V, 30 A, Dual Common Cathode, 2.2 V, 32 ns, 100 A

INFINEON

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- - - - - - - - - - - Rapid2 -
IRFP1405PBF
IRFP1405PBF - Power MOSFET, N Channel, 55 V, 160 A, 0.0053 ohm, TO-247AC, Through Hole

8658382

Power MOSFET, N Channel, 55 V, 160 A, 0.0053 ohm, TO-247AC, Through Hole

INFINEON

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1+ NT$82.10 10+ NT$73.18 100+ NT$67.86 500+ NT$62.53 1000+ NT$57.20

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N Channel - - - TO-247AC Through Hole - - - - - - -
AUIRF7316QTR
AUIRF7316QTR - Dual MOSFET, P Channel, 30 V, 30 V, 4.9 A, 4.9 A, 0.042 ohm

2725789

Dual MOSFET, P Channel, 30 V, 30 V, 4.9 A, 4.9 A, 0.042 ohm

INFINEON

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2725789RL in Re-reel

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P Channel - - - SOIC - - - - - - HEXFET Series AEC-Q101
IRFB3207PBF
IRFB3207PBF - Power MOSFET, N Channel, 75 V, 180 A, 0.0036 ohm, TO-220AB, Through Hole

9052070

Power MOSFET, N Channel, 75 V, 180 A, 0.0036 ohm, TO-220AB, Through Hole

INFINEON

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N Channel 75V 180A 0.0036ohm TO-220AB Through Hole 10V 4V 330W 3Pins 175°C - -
BFR340FH6327XTSA1
BFR340FH6327XTSA1 - Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 75 mW, 20 mA, TSFP

2480680

Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 75 mW, 20 mA, TSFP

INFINEON

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2480680RL in Re-reel

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- - - - TSFP Surface Mount - - - - - - -
BAS7005E6327HTSA1
BAS7005E6327HTSA1 - Small Signal Diode, Dual Common Cathode, 70 V, 70 mA, 1 V, 100 mA

2443536RL

Small Signal Diode, Dual Common Cathode, 70 V, 70 mA, 1 V, 100 mA

INFINEON

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- - - - - - - - - - - - -
BFR340FH6327XTSA1
BFR340FH6327XTSA1 - Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 75 mW, 20 mA, TSFP

2480680RL

Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 75 mW, 20 mA, TSFP

INFINEON

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- - - - TSFP Surface Mount - - - - - - -
IPP80R1K2P7XKSA1
IPP80R1K2P7XKSA1 - Power MOSFET, N Channel, 800 V, 4.5 A, 1 ohm, TO-220, Through Hole

2771327

Power MOSFET, N Channel, 800 V, 4.5 A, 1 ohm, TO-220, Through Hole

INFINEON

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N Channel - - - TO-220 Through Hole - - - - - CoolMOS P7 -
BFP843FH6327XTSA1
BFP843FH6327XTSA1 - Bipolar - RF Transistor, NPN, 2.6 V, 125 mW, 55 mA, TSFP

2781218RL

Bipolar - RF Transistor, NPN, 2.6 V, 125 mW, 55 mA, TSFP

INFINEON

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- - - - TSFP Surface Mount - - - - - - AEC-Q101
AUIRF7316QTR
AUIRF7316QTR - Dual MOSFET, P Channel, 30 V, 30 V, 4.9 A, 4.9 A, 0.042 ohm

2725789RL

Dual MOSFET, P Channel, 30 V, 30 V, 4.9 A, 4.9 A, 0.042 ohm

INFINEON

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P Channel 30V 4.9A - SOIC Surface Mount 10V 3V - - - HEXFET Series AEC-Q101
IRF1104PBF
IRF1104PBF - Power MOSFET, N Channel, 40 V, 100 A, 0.009 ohm, TO-220AB, Through Hole

3155125

Power MOSFET, N Channel, 40 V, 100 A, 0.009 ohm, TO-220AB, Through Hole

INFINEON

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N Channel 40V 100A 0.009ohm TO-220AB Through Hole 10V 4V 170W 3Pins 175°C HEXFET Series -
IPT60R150G7XTMA1
IPT60R150G7XTMA1 - Power MOSFET, N Channel, 600 V, 17 A, 0.129 ohm, HSOF, Surface Mount

2983374RL

Power MOSFET, N Channel, 600 V, 17 A, 0.129 ohm, HSOF, Surface Mount

INFINEON

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N Channel - - - HSOF Surface Mount - - - - - CoolMOS G7 -
IPT60R150G7XTMA1
IPT60R150G7XTMA1 - Power MOSFET, N Channel, 600 V, 17 A, 0.129 ohm, HSOF, Surface Mount

2983374

Power MOSFET, N Channel, 600 V, 17 A, 0.129 ohm, HSOF, Surface Mount

INFINEON

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N Channel - - - HSOF Surface Mount - - - - - CoolMOS G7 -
IPN70R600P7SATMA1
IPN70R600P7SATMA1 - Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, SOT-223, Surface Mount

2986474RL

Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, SOT-223, Surface Mount

INFINEON

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N Channel - - - SOT-223 Surface Mount - - - - - CoolMOS P7 -