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2N7002ET1G
Power MOSFET, N Channel, 60 V, 310 mA, 2.5 ohm, SOT-23, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號2N7002ET1G
訂購代碼2317616
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id310mA
Drain Source On State Resistance2.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation420mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits.
- 1.2A Pulsed drain current
- ±20V Gate-source voltage
- Halogen-free
應用
Industrial, Consumer Electronics
技術規格
Channel Type
N Channel
Continuous Drain Current Id
310mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
420mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
2N7002ET1G 的替代選擇
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000033