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FCD4N60TM
Power MOSFET, N Channel, 600 V, 3.9 A, 1 ohm, TO-252 (DPAK), Surface Mount
產品總覽
The FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 12.8nC)
- Low effective output capacitance (Coss.eff = 32pF)
- 100% avalanche tested
應用
Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy
產品訊息
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