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產品訊息
製造商ONSEMI
製造商產品編號FDMC510P
訂購代碼1885764
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id18A
Drain Source On State Resistance0.008ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max500mV
Power Dissipation41W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDMC510P is a P-channel MOSFET produced using advanced PowerTrench® process. It is suitable for battery management and load switch applications.
- High-performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 100% UIL tested
- 2kV typical HBM ESD protection level
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
18A
Transistor Case Style
MLP
Rds(on) Test Voltage
4.5V
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.008ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
500mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤):.000066