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FDMC6675BZ
Power MOSFET, P Channel, 30 V, 20 A, 0.0107 ohm, MLP, Surface Mount
可供訂購
製造商標準交貨時間：15 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$38.650 |
| 10+ | NT$26.970 |
| 100+ | NT$20.390 |
| 500+ | NT$17.350 |
| 1000+ | NT$15.760 |
| 5000+ | NT$14.240 |
價格Each
最少: 1
多項: 1
NT$38.65
新增零件編號/ 品項附註
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產品訊息
製造商ONSEMI
製造商產品編號FDMC6675BZ
訂購代碼2083250
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance0.0107ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation36W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDMC6675BZ is a P-channel MOSFET produced using PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 8kV typical HBM ESD protection level
技術規格
Channel Type
P Channel
Continuous Drain Current Id
20A
Transistor Case Style
MLP
Rds(on) Test Voltage
10V
Power Dissipation
36W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0107ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDMC6675BZ 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000318