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FDN336P
Power MOSFET, P Channel, 20 V, 1.3 A, 0.122 ohm, SuperSOT, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDN336P
訂購代碼2323184
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.3A
Drain Source On State Resistance0.122ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDN336P is a 2.5V specified P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for load switching, battery charging circuits and DC-to-DC conversion. The SuperSOT™-3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.
- High performance Trench technology for extremely low RDS (ON)
- 3.6nC typical low gate charge
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
1.3A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.122ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDN336P 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.000036