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FDS2672
Power MOSFET, N Channel, 200 V, 3.9 A, 0.059 ohm, SOIC, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDS2672
訂購代碼2453411
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id3.9A
Drain Source On State Resistance0.059ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.9V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDS2672 is a single N-channel MOSFET produced using advanced UItraFET Trench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
3.9A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.059ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDS2672 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.000187