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產品訊息
製造商ONSEMI
製造商產品編號FDS3572
訂購代碼2453413
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id8.9A
Drain Source On State Resistance0.016ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDS3572 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for use in primary switch for isolated DC-to-DC converters, high voltage synchronous rectifier for DC bus converters, distributed power and intermediate bus architectures.
- Low miller charge
- Low QRR body diode
- Optimized efficiency at high frequencies
- UIS Capability (single pulse and repetitive pulse)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8.9A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.016ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤):.000187