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FDS86140
Power MOSFET, N Channel, 100 V, 11.2 A, 0.0098 ohm, SOIC, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDS86140
訂購代碼2083336
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id11.2A
Drain Source On State Resistance0.0098ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDS86140 is a N-channel MOSFET produced using advanced PowerTrench® process. It is suitable for DC-to-DC converters, off-line UPS and high voltage synchronous rectifier applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handing capability in a widely used surface-mount package
- 100% UIL tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
11.2A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0098ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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重量 (公斤)：.0005