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MJB41CT4G
Bipolar Transistor Array, NPN, 100 V, 6 A, 65 W
產品訊息
製造商ONSEMI
製造商產品編號MJB41CT4G
訂購代碼2535623
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max NPN100V
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN6A
Continuous Collector Current PNP-
Power Dissipation NPN65W
Power Dissipation PNP-
DC Current Gain hFE Min NPN15hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleTO-263 (D2PAK)
No. of Pins3Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN3MHz
Transition Frequency PNP-
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
產品總覽
The MJB41CT4G is a NPN-PNP complementary silicon Power Transistor with lead formed for surface-mount applications in plastic sleeves.
- -65 to 150°C Operating junction temperature range
- Electrically same as TIP41 and T1P42 series
應用
Industrial, Power Management
技術規格
Transistor Polarity
NPN
Collector Emitter Voltage Max PNP
-
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
3Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
SVHC
Lead (27-Jun-2024)
Collector Emitter Voltage Max NPN
100V
Continuous Collector Current NPN
6A
Power Dissipation NPN
65W
DC Current Gain hFE Min NPN
15hFE
Transistor Case Style
TO-263 (D2PAK)
Transistor Mounting
Surface Mount
Transition Frequency NPN
3MHz
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.001