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MJD2955T4G
Bipolar (BJT) Single Transistor, PNP, 60 V, 10 A, 1.75 W, TO-252 (DPAK), Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號MJD2955T4G
訂購代碼2533325
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max60V
Continuous Collector Current10A
Power Dissipation1.75W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min5hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
技術規格
Transistor Polarity
PNP
Continuous Collector Current
10A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
5hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
60V
Power Dissipation
1.75W
Transistor Mounting
Surface Mount
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Vietnam
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Vietnam
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.000426