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MJD41CT4G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 6 A, 1.75 W, TO-252 (DPAK)
產品訊息
製造商ONSEMI
製造商產品編號MJD41CT4G
訂購代碼2441284
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Continuous Collector Current6A
Power Dissipation1.75W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins4Pins
Transition Frequency3MHz
DC Current Gain hFE Min15hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
產品總覽
The MJD41CT4G is a 6A NPN bipolar Power Transistor designed for general purpose amplifier and low speed switching applications.
- Complementary device
- Electrically similar to popular TIP41 and TIP42 series
- AEC-Q101 qualified and PPAP capable
應用
Industrial, Power Management, Automotive
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Transistor Polarity
NPN
Continuous Collector Current
6A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
4Pins
DC Current Gain hFE Min
15hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Power Dissipation
1.75W
Transistor Mounting
Surface Mount
Transition Frequency
3MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
MJD41CT4G 的替代選擇
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原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
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重量 (公斤)：.001