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MJW21196G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 250 V, 16 A, 200 W, TO-247, Through Hole
225 有存貨
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225 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$161.070 |
| 10+ | NT$90.570 |
| 100+ | NT$72.870 |
| 500+ | NT$71.350 |
| 1000+ | NT$69.820 |
價格Each
最少: 1
多項: 1
NT$161.07
新增零件編號/ 品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
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產品訊息
製造商ONSEMI
製造商產品編號MJW21196G
訂購代碼1700966
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max250V
Continuous Collector Current16A
Power Dissipation200W
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min20hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The MJW21196G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
- Total harmonic distortion characterized
- High DC current gain
- Excellent gain linearity
- High SOA
應用
Audio, Industrial
技術規格
Transistor Polarity
NPN
Continuous Collector Current
16A
Transistor Case Style
TO-247
No. of Pins
3Pins
DC Current Gain hFE Min
20hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
250V
Power Dissipation
200W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00542