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MMBF170
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號MMBF170
訂購代碼2438269
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
Drain Source On State Resistance5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation300mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The MMBF170 is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
- High density cell design for low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
500mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
MMBF170 的替代選擇
找到 8 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.001