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MMBT3904LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 225 mW, SOT-23, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號MMBT3904LT1G
訂購代碼2317804
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max40V
Continuous Collector Current200mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (27-Jun-2024)
產品總覽
MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor.
- Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0)
- Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
- Emitter-base breakdown voltage is 6.0VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
- Collector current - continuous is 900mAdc max (TA = 25°C)
- Total Device Dissipation FR-5 Board is 225mW max (TA = 25°C)
- Thermal resistance junction-to-ambient is 556°C/W max (TA = 25°C)
- Collector cutoff current is 50nAdc max (VCE = 30VDC, VEB = 3.0Vdc)
- Noise figure is 5.0dB max (VCE = 5.0VDC, IC = 100µADC, RS = 1.0kohm, f = 1.0KHz)
- SOT-416 package
- Junction temperature range from -65 to +150°C
技術規格
Transistor Polarity
NPN
Continuous Collector Current
200mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
40V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
300MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
MMBT3904LT1G 的替代選擇
找到 8 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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重量 (公斤)：.000033