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NTJD4152PT1G
Dual MOSFET, P Channel, 20 V, 20 V, 880 mA, 880 mA, 0.215 ohm
產品訊息
製造商ONSEMI
製造商產品編號NTJD4152PT1G
訂購代碼2533191RL
技術資料表
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id880mA
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel880mA
On Resistance Rds(on)0.215ohm
Continuous Drain Current Id P Channel880mA
Drain Source On State Resistance N Channel0.215ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.215ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.2V
Power Dissipation Pd272mW
No. of Pins6Pins
Power Dissipation N Channel272mW
Power Dissipation P Channel272mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
技術規格
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
880mA
Continuous Drain Current Id N Channel
880mA
Continuous Drain Current Id P Channel
880mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.215ohm
Gate Source Threshold Voltage Max
1.2V
No. of Pins
6Pins
Power Dissipation P Channel
272mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.215ohm
Drain Source On State Resistance N Channel
0.215ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-363
Power Dissipation Pd
272mW
Power Dissipation N Channel
272mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.000046