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STGW15M120DF3
IGBT Single Transistor, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 Pins
產品總覽
The STGW15M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery anti-parallel diode
- 10µs Short-circuit withstand time
應用
Power Management, Alternative Energy, Maintenance & Repair, Motor Drive & Control
產品訊息
技術文件 (2)
開放補貨預購
| 數量 | 價格 | 您的價格 |
|---|---|---|
| 1+ | NT$158.74 | |
| 10+ | NT$134.85 | |
| 100+ | NT$107.95 | |
| 250+ | NT$101.89 | |
| 500+ | NT$96.16 | |
| 1000+ | NT$82.12 | |
不提供定價。 請聯絡客戶服務。
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