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STP80NF55-08
Power MOSFET, N Channel, 55 V, 80 A, 8000 µohm, TO-220, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$93.230 |
| 10+ | NT$46.280 |
| 100+ | NT$44.320 |
| 500+ | NT$44.100 |
| 1000+ | NT$43.870 |
價格Each
最少: 1
多項: 1
NT$93.23
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP80NF55-08
訂購代碼1291988
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id80A
Drain Source On State Resistance8000µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The STP80NF55-08 from STMicroelectronics is a through hole, 55V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique Single Feature Size strip based process, resulting transistor shows extremely high packing density for low onstate resistance, rugged avalanche characteristics and less critical alignment steps. Applicable at switching applications.
- Drain to source voltage (Vds) of 55V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of 80A
- Power dissipation (Pd) of 300W
- Low on state resistance of 6.5mohm at Vgs 10V
- Operating junction temperature range from -55°C to 175°C
應用
Power Management, Consumer Electronics, Portable Devices, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
8000µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Morocco
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Morocco
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.002685