Next generation SiC MOSFETs for industrial and green energy applications

650V silicon carbide (SiC) MOSFETs

These highly efficient and versatile products will be used in a variety of demanding applications, including switch mode power supplies (SMPS) and uninterruptible power supplies (UPSs) for servers, data centers and communication equipment.

They will also find applications in renewable energy, including photovoltaic (PV) inverters and bi-directional DC-DC converters, such as those used for electric vehicle (EV) charging.

The new TW015N65C, TW027N65C, TW048N65C, TW083N65C and TW107N65C are based on Toshiba’s advanced third-generation SiC process, which optimises the cell structures used in second-generation devices.

As a result of this advancement, a key figure of merit (FoM) calculated as the product of drain-source on-resistance (R_DS(on)) and gate-drain charge (Q_g) to represent both static and dynamic losses have improved by about 80%. This significantly reduces losses and allows the development of power solutions with higher power densities and lower running costs.

In common with earlier devices, the new third-generation MOSFETs include a built-in SiC Schottky barrier with a low forward voltage (V_F) of -1.35V (typ.) to suppress fluctuation in R_DS(on), thereby enhancing reliability.

The new devices are able to handle currents (I_D) up to 100A and feature R_DS(on) values as low as 15mΩ. All devices are housed in an industry standard TO-247 package.

1200V silicon carbide (SiC) MOSFETs

1200V silicon-carbide (SiC) MOSFETs that leverage the Company’s third-generation SiC technology to boost the energy efficiency of high-voltage industrial applications.

They are used in equipment such as EV charging stations, photovoltaic inverters, industrial power supplies, uninterruptible power supplies (UPS), and bidirectional or half-bridge DC-DC converters.

By improving the on-resistance x gate-drain charge (R_DS(on) x Q_GD) figure of merit by more than 80%, Toshiba’s latest SiC technology elevates both conduction and switching performance in power-conversion topologies.

In addition, the new devices contain the innovative embedded Schottky barrier diode (SBD), proven in the previous generation. The embedded SBD enhances the reliability of SiC MOSFETs by overcoming internal parasitic effects to maintain a stable device R_DS(on).

Furthermore, the products have a generous maximum gate-source voltage range from -10V to 25V, which enhances flexibility to operate in various circuit designs and application conditions. The gate-threshold voltage (V_GS(th)) ranges from 3.0V to 5.0V, ensures predictable switching performance with minimal drift, and permits a simple gate-driver design.

The third-generation SiC MOSFETs available now comprise the TW015N120C, TW030N120C, TW045N120C, TW060N120C, and TW140N120C. The devices have R_DS(on) values from 15mΩ to 140mΩ (typical, at V_GS = 18V) and drain-current ratings from 20A to 100A (DC at T_C=25°C).

All the devices are in full production and ready to order from distributors, in the standard TO-247 power package.

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