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SIR186DP-T1-RE3
Power MOSFET, N Channel, 60 V, 60 A, 0.0045 ohm, PowerPAK SO, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SIR186DP-T1-RE3
訂購代碼2785448
Product RangeTrenchFET
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
Drain Source On State Resistance0.0045ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.6V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCLead (07-Nov-2024)
產品總覽
N-channel 60V (D-S) MOSFET suitable for use in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
- TrenchFET® Gen IV power MOSFET
- Very low RDS - Qi figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100% Rg and UIS tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0045ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.6V
No. of Pins
8Pins
Product Range
TrenchFET
SVHC
Lead (07-Nov-2024)
SIR186DP-T1-RE3 的替代選擇
找到 6 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000204