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SIR510DP-T1-RE3
Power MOSFET, N Channel, 100 V, 126 A, 0.003 ohm, PowerPAK SO, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SIR510DP-T1-RE3
訂購代碼3677856
Product RangeTrenchFET Gen V
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id126A
Drain Source On State Resistance0.003ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
產品總覽
N-channel 100V (D-S) MOSFET in PowerPAK SO-8 package is typically used in synchronous rectification, primary side switch, DC/DC converter, OR-ing and hot swap switch, power supplies, motor drive control and battery management applications.
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100% Rg and UIS tested
技術規格
Channel Type
N Channel
Continuous Drain Current Id
126A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.003ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
TrenchFET Gen V
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005