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SIR826ADP-T1-GE3
Power MOSFET, N Channel, 80 V, 60 A, 0.0046 ohm, PowerPAK SO, Surface Mount
產品訊息
製造商VISHAY
製造商產品編號SIR826ADP-T1-GE3
訂購代碼2364092
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id60A
Drain Source On State Resistance0.0046ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
產品總覽
The SIR826ADP-T1-GE3 is a 80V N-channel TrenchFET® Power MOSFET. Suitable for use in primary side switching and DC/AC inverters applications and also used in synchronous rectification circuits.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0046ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
SIR826ADP-T1-GE3 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.00012