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SIR826BDP-T1-RE3
Power MOSFET, N Channel, 80 V, 80.8 A, 0.00435 ohm, PowerPAK SO, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SIR826BDP-T1-RE3
訂購代碼3014147
Product RangeTrenchFET Gen IV
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id80.8A
Drain Source On State Resistance0.00435ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation83W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
80.8A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.00435ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.8V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001