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SIR870BDP-T1-RE3
Power MOSFET, N Channel, 100 V, 81 A, 0.0061 ohm, PowerPAK SO, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SIR870BDP-T1-RE3
訂購代碼3397321
Product RangeTrenchFET Gen IV
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id81A
Drain Source On State Resistance0.0061ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation100W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (21-Jan-2025)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
81A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
100W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0061ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
Lead (21-Jan-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001