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SIRS4600DP-T1-RE3
Power MOSFET, N Channel, 60 V, 334 A, 0.0012 ohm, PowerPAK SO-8S, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SIRS4600DP-T1-RE3
訂購代碼4241531
Product RangeTrenchFET Gen IV Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id334A
Drain Source On State Resistance0.0012ohm
Transistor Case StylePowerPAK SO-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation240W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead (21-Jan-2025)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
334A
Transistor Case Style
PowerPAK SO-8S
Rds(on) Test Voltage
10V
Power Dissipation
240W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
SVHC
Lead (21-Jan-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000074