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SIS9634LDN-T1-GE3
Dual MOSFET, N Channel, 60 V, 6 A, 0.031 ohm
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產品訊息
製造商VISHAY
製造商產品編號SIS9634LDN-T1-GE3
訂購代碼4139040
Product RangeTrenchFET Gen IV Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.031ohm
Transistor Case StylePowerPAK 1212
No. of Pins8Pins
Power Dissipation N Channel17.9W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Transistor Case Style
PowerPAK 1212
Power Dissipation N Channel
17.9W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.031ohm
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
TrenchFET Gen IV Series
SVHC
No SVHC (21-Jan-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000154