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SISA04DN-T1-GE3
Power MOSFET, N Channel, 30 V, 40 A, 0.00215 ohm, PowerPAK 1212, Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$41.890 |
| 10+ | NT$29.420 |
| 100+ | NT$21.890 |
| 500+ | NT$17.820 |
| 1000+ | NT$14.260 |
價格Each
最少: 1
多項: 1
NT$41.89
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產品訊息
製造商VISHAY
製造商產品編號SISA04DN-T1-GE3
訂購代碼2114704
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id40A
Drain Source On State Resistance0.00215ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.1V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
N-channel 30V (D-S) MOSFET suitable for use in switch mode power supplies, personal computers and servers, telecom bricks and VRM’s and POL.
- Halogen-free according to IEC 61249-2-21 definition
- TrenchFET® Gen IV Power MOSFET
- 100% Rg and UIS tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
40A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.00215ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
No. of Pins
8Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
SISA04DN-T1-GE3 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Switzerland
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Switzerland
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00195