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SISB46DN-T1-GE3
Dual MOSFET, N Channel, 40 V, 40 V, 34 A, 34 A, 0.0097 ohm
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產品訊息
製造商VISHAY
製造商產品編號SISB46DN-T1-GE3
訂購代碼3470680
Product RangeTrenchFET IV Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel34A
Continuous Drain Current Id P Channel34A
Drain Source On State Resistance N Channel0.0097ohm
Drain Source On State Resistance P Channel0.0097ohm
Transistor Case StylePowerPAK 1212
No. of Pins8Pins
Power Dissipation N Channel23W
Power Dissipation P Channel23W
Operating Temperature Max150°C
Product RangeTrenchFET IV Series
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
34A
Drain Source On State Resistance P Channel
0.0097ohm
No. of Pins
8Pins
Power Dissipation P Channel
23W
Product Range
TrenchFET IV Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
34A
Drain Source On State Resistance N Channel
0.0097ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation N Channel
23W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
SISB46DN-T1-GE3 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00018