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SISH536DN-T1-GE3
Power MOSFET, N Channel, 30 V, 67.4 A, 0.00325 ohm, PowerPAK 1212, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SISH536DN-T1-GE3
訂購代碼3677851
Product RangeTrenchFET Gen V
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id67.4A
Drain Source On State Resistance0.00325ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation26.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
產品總覽
N-channel 30V (D-S) MOSFET in PowerPAK 1212-8SH package is typically used in DC/DC converter, POL, synchronous rectification, battery management, power and load switch applications.
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Enables higher power density with very low RDS(on) and thermally enhanced compact package
- 100% Rg and UIS tested
技術規格
Channel Type
N Channel
Continuous Drain Current Id
67.4A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
26.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.00325ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET Gen V
MSL
MSL 1 - Unlimited
SISH536DN-T1-GE3 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
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產品合規憑證
重量 (公斤)：.0005