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SISHA12ADN-T1-GE3
Power MOSFET, N Channel, 30 V, 25 A, 0.0043 ohm, PowerPAK 1212, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SISHA12ADN-T1-GE3
訂購代碼3128849
Product RangeTrenchFET
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id25A
Drain Source On State Resistance0.0043ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation28W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
25A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
28W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0043ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
SISHA12ADN-T1-GE3 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.015