列印頁面
SISS5623DN-T1-GE3
Power MOSFET, P Channel, 60 V, 36.3 A, 0.024 ohm, PowerPAK 1212-8S, Surface Mount
產品訊息
製造商VISHAY
製造商產品編號SISS5623DN-T1-GE3
訂購代碼4199572
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id36.3A
Drain Source On State Resistance0.024ohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation56.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
36.3A
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation
56.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
8Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000074