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| 數量 | 價格 |
|---|---|
| 1+ | NT$1,478.930 |
| 5+ | NT$1,424.580 |
| 10+ | NT$1,370.220 |
| 50+ | NT$1,315.870 |
| 100+ | NT$1,261.510 |
價格Each
最少: 1
多項: 1
NT$1,478.93
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFN24N100
訂購代碼4905568
技術資料表
Channel TypeN Channel
Continuous Drain Current Id24A
Drain Source Voltage Vds1kV
Drain Source On State Resistance0.39ohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Transistor MountingModule
Power Dissipation600W
Operating Temperature Max150°C
No. of Pins3Pins
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFN24N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- miniBLOC with aluminium nitride isolation
- UL94V-0 Flammability rating
- Low RDS (ON) HDMOS™ process
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
應用
Power Management, Industrial, Motor Drive & Control
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
1kV
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
5.5V
Power Dissipation
600W
No. of Pins
3Pins
MSL
-
Continuous Drain Current Id
24A
Drain Source On State Resistance
0.39ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
相關產品
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:United States
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤):.04