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IXKN75N60C
MOSFET Transistor, N Channel, 75 A, 600 V, 0.03 ohm, 10 V, 3.9 V, SOT-227B
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產品訊息
製造商產品編號IXKN75N60C
訂購代碼3438400
Product RangeCoolMOS Series
技術資料表
Channel TypeN Channel
Continuous Drain Current Id75A
Drain Source Voltage Vds600V
Drain Source On State Resistance0.03ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.9V
Power Dissipation560W
Operating Temperature Max150°C
Product RangeCoolMOS Series
SVHCNo SVHC (12-Jan-2017)
產品總覽
IXKN75N60C is a CoolMOS™ power MOSFET. Typical applications are switched mode power supplies (SMPS), uninterruptible power supplies (UPS), power factor correction (PFC), welding, inductive heating.
- N-channel enhancement mode, low RDSon, high VDSS
- MiniBLOC package, electrically isolated copper base
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation due to AlN ceramic substrate
- International standard package SOT-227, easy screw assembly
- High blocking capability, low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness, enhanced total power density
- Voltage rating VDSS is 600V at TVJ = 25°C to 150°C, current rating ID25 is 75A at TC = 25°C
- Resistor RDS(on) is 36mohm at VGS = 10V, ID = ID90
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
600V
Rds(on) Test Voltage
10V
Power Dissipation
560W
Product Range
CoolMOS Series
Continuous Drain Current Id
75A
Drain Source On State Resistance
0.03ohm
Gate Source Threshold Voltage Max
3.9V
Operating Temperature Max
150°C
SVHC
No SVHC (12-Jan-2017)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (12-Jan-2017)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004