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| 數量 | 價格 |
|---|---|
| 1+ | NT$85.510 |
| 10+ | NT$58.680 |
| 50+ | NT$56.580 |
| 100+ | NT$54.470 |
| 250+ | NT$51.880 |
| 500+ | NT$50.260 |
| 1000+ | NT$48.650 |
| 2500+ | NT$47.460 |
產品訊息
| 製造商 | TEXAS INSTRUMENTS |
|---|---|
| 製造商產品編號 | LF398N/NOPB复制 |
| 製造商標準前置時間 | 28 週 |
| 訂購代碼 | 3005404 |
| No. of Amplifiers | 1 Amplifier |
| Bandwidth | 1MHz |
| Acquisition Time | 4µs |
| Input Offset Voltage | 2mV |
| IC Case / Package | DIP |
| No. of Pins | 8Pins |
| Supply Voltage Range | ± 5V to ± 18V |
| Settling Time | - |
| Operating Temperature Min | 0°C |
| Operating Temperature Max | 70°C |
| Product Range | - |
| MSL | - |
| SVHC | No SVHC (27-Jun-2018) |
產品總覽
The LF398N/NOPB is a monolithic Sample-and-Hold Circuit uses BI-FET technology to obtain ultrahigh DC accuracy with fast acquisition of signal and low droop rate. Operating as unity-gain follower, DC gain accuracy is 0.002% typical and acquisition time is as low as 6µs to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth. Input offset adjust is accomplished with a single pin and does not degrade input offset drift. The wide bandwidth allows the LF198-N to be included inside the feedback loop of 1MHz operational amplifiers without having stability problems. Input impedance of 10¹⁰Ω allows high-source impedances to be used without degrading accuracy. P-channel junction FETs are combined with bipolar devices in the output amplifier to give droop rates as low as 5mV/minute with a 1µF hold capacitor. The JFETs have much lower noise than MOS devices used in previous designs and do not exhibit high temperature instabilities.
- Low input offset
- Low output noise in hold mode
- Input characteristics do not change during hold mode
- High supply rejection ratio in sample or hold
- Wide bandwidth
- Logic input compatible with TTL, PMOS and CMOS
- 0.5mV Typical hold step at 0.01µF
- 0.002% Gain accuracy
- 500mW Power dissipation
- ±15V Supply voltage
應用
Industrial
警告
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
技術規格
| No. of Amplifiers | 1 Amplifier |
|---|---|
| Acquisition Time | 4µs |
| IC Case / Package | DIP |
| Supply Voltage Range | ± 5V to ± 18V |
| Operating Temperature Min | 0°C |
| Product Range | - |
| SVHC | No SVHC (27-Jun-2018) |
| Bandwidth | 1MHz |
|---|---|
| Input Offset Voltage | 2mV |
| No. of Pins | 8Pins |
| Settling Time | - |
| Operating Temperature Max | 70°C |
| MSL | - |
技術文件 (1)
法規與環境保護
| 原產地: 承擔產品生產最後程序之國家原產地: | United States 承擔產品生產最後程序之國家 |
|---|---|
| 關稅編號: | 85423390 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| 符合 RoHS 規定: | 是 RoHS |
| 符合 RoHS 鄰苯二甲酸酯類規定: | 是 RoHS |
| SVHC: | No SVHC (27-Jun-2018) |
| 下載產品合規憑證 | 產品合規憑證 |
| 重量 (公斤): | .002117 |

