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IXBH42N170

IGBT, 80 A, 2.8 V, 360 W, 1.7 kV, TO-247, 3 Pins

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Manufacturer	IXYS SEMICONDUCTOR
Manufacturer Part No	IXBH42N170Copy
Manufacturer Standard Lead Time	40 weeks
Order Code	3438361
Product Range	BIMOSFET
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Technical Datasheet	Data Sheet See all Technical Docs

300 In Stock

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NT$1,181.42

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Manufacturer	IXYS SEMICONDUCTOR
Manufacturer Part No	IXBH42N170Copy
Manufacturer Standard Lead Time	40 weeks
Order Code	3438361
Product Range	BIMOSFET
Technical Datasheet	Data Sheet
Continuous Collector Current	80A
Collector Emitter Saturation Voltage	2.8V
Power Dissipation	360W
Collector Emitter Voltage Max	1.7kV
Transistor Case Style	TO-247
No. of Pins	3Pins
Operating Temperature Max	150°C
Transistor Mounting	Through Hole
Product Range	BIMOSFET
SVHC	No SVHC (12-Jan-2017)

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Continuous Collector Current	80A
Power Dissipation	360W
Transistor Case Style	TO-247
Operating Temperature Max	150°C
Product Range	BIMOSFET

Collector Emitter Saturation Voltage	2.8V
Collector Emitter Voltage Max	1.7kV
No. of Pins	3Pins
Transistor Mounting	Through Hole
SVHC	No SVHC (12-Jan-2017)

IXBH42N170 Data Sheet

Product Change Notice EN

Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin:	South Korea Country in which last significant manufacturing process was carried out
Tariff No:	85412900
US ECCN:	EAR99
EU ECCN:	NLR
RoHS Compliant:	Yes RoHS
RoHS Phthalates Compliant:	Yes RoHS
SVHC:	No SVHC (12-Jan-2017)
Download Product Compliance Certificate	Product Compliance Certificate
Weight (kg):	.004