Semiconductors - Discretes
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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IRF9Z24NPBF
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8648670 |
Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole INFINEON MOSFET, P, -55V, -12A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.175ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:45W; Transistor C
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1+ NT$39.14 10+ NT$34.61 100+ NT$26.54 500+ NT$20.99 1000+ NT$17.49 |
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IRFP150NPBF
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8649235 |
Power MOSFET, General Purpose, N Channel, 100 V, 42 A, 0.036 ohm, TO-247AC, Through Hole INFINEON MOSFET, N, 100V, 42A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor C
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1+ NT$102.02 10+ NT$92.02 100+ NT$74.12 |
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SST2222AT116
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1680374 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 150 mA, 200 mW, SOT-23, Surface Mount ROHM TRANSISTOR SOT-23 NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:150mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; O
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5+ NT$9.89 100+ NT$5.26 500+ NT$3.47 1000+ NT$2.36 3000+ NT$1.82 |
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GF1G
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1467478 |
Standard Recovery Diode, 400 V, 1 A, Single, 1 V, 2 µs, 30 A ONSEMI DIODE,400V,1A,DO214AC; Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:2µs; Forward Surge Current Ifsm Max:30A; Operating Temperature Max:175°C; Dio
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5+ NT$15.12 100+ NT$10.30 500+ NT$7.73 1000+ NT$5.80 2000+ NT$5.32 |
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1N5822G
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1458993 |
Schottky Rectifier, General Purpose, 40 V, 3 A, Single, DO-201AD, 2 Pins, 525 mV ONSEMI DIODE, SCHOTTKY, 3A, 59-10; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):3A; Diode Configuration:Single; Diode Case Style:DO-201AD; No. of Pins:2Pins; Forward Voltage VF Max:525mV; Forward Surge Curren
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1+ NT$28.74 10+ NT$24.61 100+ NT$18.40 500+ NT$14.45 1000+ NT$11.17 2000+ NT$10.85 More Pricing... |
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BSS84,215
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1510765 |
Power MOSFET, P Channel, 50 V, 130 mA, 6 ohm, SOT-23, Surface Mount NEXPERIA MOSFET, P, -50V, 0.13A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-130mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:250mW; Transistor
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5+ NT$12.59 100+ NT$6.66 500+ NT$4.38 1000+ NT$2.98 |
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IKW40N120H3FKSA1
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1832351 |
IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 Pins INFINEON IGBT+ DIODE,1200V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:483W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°
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1+ NT$315.63 10+ NT$285.17 100+ NT$236.11 500+ NT$230.69 |
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IRF5305PBF
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8648255 |
Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole INFINEON MOSFET, P, -55V, -31A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:110W; Transistor
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1+ NT$67.87 10+ NT$61.21 100+ NT$47.47 500+ NT$39.27 1000+ NT$34.44 |
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IRF530NPBF
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8648263 |
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole INFINEON MOSFET, N, 100V, 17A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:63W; Transistor Case
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1+ NT$37.63 10+ NT$33.64 100+ NT$26.22 500+ NT$21.67 1000+ NT$19.01 |
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DMG1012UW
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2061403 |
Power MOSFET, Enhancement Mode, N Channel, 20 V, 1 A, 0.3 ohm, SOT-323, Surface Mount DIODES INC. MOSFET, N CH, W ESD, 20V, 1A, SOT323; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:500mV; Power Dissipation Pd:290mW; Trans
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5+ NT$9.25 100+ NT$4.91 500+ NT$3.23 1000+ NT$2.20 |
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SS16.
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2101190 |
Schottky Rectifier, 60 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 750 mV MULTICOMP PRO DIODE, RECTIFIER, 1A, 60V, DO-214AC; Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:DO-214AC; No. of Pins:2Pins; Forward Voltage VF Max:750mV; Forward Sur
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5+ NT$5.33 10+ NT$4.26 100+ NT$3.04 500+ NT$2.13 |
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IRFR5305TRPBF
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2097998 |
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount INFINEON MOSFET, P CH, 55V, 31A, DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:110W; Transistor
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1+ NT$64.54 10+ NT$57.79 100+ NT$45.05 500+ NT$37.23 1000+ NT$32.65 |
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PMEG4005AEA, 115
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8738025 |
Schottky Rectifier, 40 V, 500 mA, Single, SOD-323, 2 Pins, 470 mV NEXPERIA DIODE, SCHOTTKY, SOD-323; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):500mA; Diode Configuration:Single; Diode Case Style:SOD-323; No. of Pins:2Pins; Forward Voltage VF Max:470mV; Forward Surge Curren
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5+ NT$14.25 100+ NT$8.88 500+ NT$6.08 1000+ NT$4.68 |
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DFLS1200-7
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1713890RL |
Schottky Rectifier, POWERDI®, 200 V, 1 A, Single, PowerDI 123, 2 Pins, 850 mV DIODES INC. DIODE, SCHOTTKY, 1A, 200V, POWERDI123; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:PowerDI 123; No. of Pins:2Pins; Forward Voltage VF Max:850mV; Forwa
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100+ NT$14.84 500+ NT$11.66 1000+ NT$9.01 |
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BC107
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9206752 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 600 mW, TO-18, Through Hole MULTICOMP PRO TRANSISTOR, NPN, 45V, 0.2A, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:TO-18; No. of Pi
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1+ NT$14.82 10+ NT$14.28 100+ NT$12.80 500+ NT$11.47 |
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IRLML0040TRPBF
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1831088 |
Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount INFINEON MOSFET & DIODE,N CH,40V,3.6A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:1.3W; Transi
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SS54
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1861427 |
Schottky Rectifier, 40 V, 5 A, Single, DO-214AB (SMC), 2 Pins, 550 mV MULTICOMP PRO DIODE, SCHOTTK, RECTIF, 5A, 40V, SMC; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):5A; Diode Configuration:Single; Diode Case Style:DO-214AB; No. of Pins:2Pins; Forward Voltage VF Max:550mV; Forward Su
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2N2102
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1611559 |
Bipolar (BJT) Single Transistor, NPN, 65 V, 1 A, 800 mW, TO-39, Through Hole MULTICOMP PRO Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:60MHz; Power Dissipation Pd:800mW; DC Collector Current:1A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-39; No. of Pins:3Pins; Operating Temperature Max:200°
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1+ NT$25.85 25+ NT$24.92 100+ NT$22.33 200+ NT$20.01 400+ NT$18.16 1000+ NT$17.45 4000+ NT$16.05 10000+ NT$13.56 More Pricing... |
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BAS70-04,215
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1626495 |
Small Signal Schottky Diode, Dual Series, 70 V, 70 mA, 700 mV, 100 mA, 125 °C NEXPERIA DIODE, SCHOTTKY, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):70mA; Forward Voltage VF Max:700mV; Forward Surge Current Ifsm Max:100mA; Operating Temperature Max:125°C; Diode Case Style:SOT-23;
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PZT2222AT1G
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1459167 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 1.5 W, SOT-223, Surface Mount ONSEMI TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1.5W; DC Collector Current:600mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-223; No. of Pins:4Pins
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J112
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1017712 |
JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C ONSEMI TRANSISTOR, JFET, -35V, TO-92; Breakdown Voltage Vbr:-35V; Zero Gate Voltage Drain Current Idss Min:5mA; Zero Gate Voltage Drain Current Idss Max:-; Gate-Source Cutoff Voltage Vgs(off) Max:-5V; Transistor Case Style:TO-9
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5+ NT$14.57 100+ NT$10.90 500+ NT$8.57 1000+ NT$6.61 2500+ NT$6.04 5000+ NT$5.64 10000+ NT$5.47 More Pricing... |
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BSS138BK,215
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2053833 |
Power MOSFET, N Channel, 60 V, 360 mA, 1 ohm, SOT-23, Surface Mount NEXPERIA MOSFET, N CH, 60V, 0.36A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:360mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:350mW; Transistor
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BAT46WJ,115
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1859908 |
Small Signal Schottky Diode, Single, 100 V, 250 mA, 850 mV, 2.5 A, 150 °C NEXPERIA DIODE, SCHOTTK, 100V, 0.25A, SOD323F; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):250mA; Forward Voltage VF Max:850mV; Forward Surge Current Ifsm Max:2.5A; Operating Temperature Max:150°C; Diode Case Style
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BAT54,215
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1081190 |
Small Signal Schottky Diode, Single, 30 V, 200 mA, 800 mV, 600 mA, 125 °C NEXPERIA DIODE, SCHOTTKY, 30V, 200MA, SOT-23; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Forward Voltage VF Max:320mV; Forward Surge Current Ifsm Max:600mA; Operating Temper
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BC817-40,215
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1081225 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 250 mW, SOT-23, Surface Mount NEXPERIA TRANSISTOR, NPN, 45V, 0.5A, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-23; No. of Pins:3
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