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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.00119ohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price (Incl. Duty, Excl. VAT) | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+NT$121,663.830 | Half Bridge | Dual N Channel | 1.33kA | 2.3kV | 0.00119ohm | Module | 15Pins | 15V | 5.15V | 175°C | XHP 2 Series | ||||||
Each | 1+NT$146,826.830 | Half Bridge | Dual N Channel | 1.185kA | 2.3kV | 0.00119ohm | Module | 15Pins | 15V | 5.15V | 175°C | XHP 2 Series | ||||||
