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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.162ohm
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MOSFET Module Configuration
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price (Incl. Duty, Excl. VAT) | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+NT$457.570 5+NT$367.070 10+NT$276.570 50+NT$256.480 100+NT$236.390 More Pricing... | Single | N Channel | 17A | 1.2kV | 0.162ohm | TO-247 | 3Pins | 20V | 3.1V | 119W | 175°C | EliteSiC Series | ||||||
Each | 1+NT$311.360 5+NT$253.110 10+NT$194.860 50+NT$176.450 100+NT$158.040 More Pricing... | Single | N Channel | 17A | 1.2kV | 0.162ohm | TO-247 | 3Pins | 20V | 3.1V | 119W | 175°C | EliteSiC Series | ||||||
