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Silicon Carbide (SiC) MOSFETs & Modules :

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Manufacturer / Description
Availability
Price For
Price (Incl. Duty, Excl. VAT)
Quantity
MOSFET Module Configuration
Channel Type
Continuous Drain Current Id
Drain Source Voltage Vds
Transistor Case Style
No. of Pins
Gate Source Threshold Voltage Max
Power Dissipation
Operating Temperature Max
4860995

RoHS

Each
1+NT$21,791.590
Half Bridge
Dual N Channel
400A
1.2kV
Module
11Pins
5.6V
1.35kW
150°C
4860993

RoHS

Each
1+NT$22,881.170
Half Bridge
Dual N Channel
250A
1.7kV
Module
11Pins
5.5V
1.35kW
150°C
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