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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
=166.7W
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Drain Source On State Resistance
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Gate Source Threshold Voltage Max
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Operating Temperature Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price (Incl. Duty, Excl. VAT) | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+NT$500.640 5+NT$440.900 10+NT$381.150 50+NT$373.530 100+NT$365.910 More Pricing... | Single | N Channel | 18.4A | 1.2kV | 0.15ohm | TO-247 | 3Pins | 12V | 4.4V | 166.7W | 175°C | ||||||
Each | 1+NT$459.940 5+NT$372.650 10+NT$285.360 50+NT$270.160 100+NT$254.960 More Pricing... | Single | N Channel | 18.4A | 1.2kV | 0.15ohm | TO-247 | 4Pins | 12V | 4.4V | 166.7W | 175°C | ||||||
