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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price (Incl. Duty, Excl. VAT) | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+NT$509.580 5+NT$445.930 10+NT$382.280 50+NT$339.730 100+NT$297.170 More Pricing... | Single | N Channel | 30A | 1.2kV | 0.087ohm | HiP247 | 4Pins | 18V | 4.2V | 236W | 200°C | ||||||
Each | 1+NT$396.120 5+NT$324.200 10+NT$252.270 50+NT$235.550 100+NT$218.830 More Pricing... | Single | N Channel | 30A | 1.2kV | 0.087ohm | HiP247 | 4Pins | 18V | 4.2V | 236W | 200°C | ||||||
