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DMG6602SVTX-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 3.4 A, 0.035 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMG6602SVTX-7Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944067RL
Cut Tape3944067
Your Part Number
43 In Stock
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43 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Re-Reel | 5 | NT$29.520 | NT$147.60 |
| Total Price | NT$147.60 | ||
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| Quantity | Price |
|---|---|
| 5+ | NT$29.520 |
| 10+ | NT$19.590 |
| 100+ | NT$12.430 |
| 500+ | NT$8.250 |
| 1000+ | NT$5.070 |
| 5000+ | NT$4.970 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6602SVTX-7Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944067RL
Cut Tape3944067
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id3.4A
On Resistance Rds(on)0.035ohm
Continuous Drain Current Id N Channel3.4A
Continuous Drain Current Id P Channel3.4A
Drain Source On State Resistance N Channel0.035ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.035ohm
Gate Source Threshold Voltage Max1.2V
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation Pd1W
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.035ohm
Continuous Drain Current Id P Channel
3.4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.035ohm
Transistor Case Style
TSOT-26
Power Dissipation Pd
1W
Power Dissipation P Channel
1W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
3.4A
Continuous Drain Current Id N Channel
3.4A
Drain Source On State Resistance N Channel
0.035ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
6Pins
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001