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HUF75345G3
Power MOSFET, General Purpose, N Channel, 55 V, 75 A, 7000 µohm, TO-247, Through Hole
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產品訊息
製造商ONSEMI
製造商產品編號HUF75345G3
訂購代碼1076348
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id75A
Drain Source On State Resistance7000µohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation325W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
產品總覽
The HUF75345G3 is a N-channel Power MOSFET manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery-operated products.
- Peak current vs. pulse width curve
- UIS Rating curve
- Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER
應用
Power Management, Motor Drive & Control, Portable Devices
技術規格
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
325W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
55V
Drain Source On State Resistance
7000µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.006