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CSD16321Q5
Power MOSFET, N Channel, 25 V, 100 A, 2400 µohm, SON, Surface Mount
224 有存貨
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224 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$79.790 |
| 10+ | NT$51.020 |
| 100+ | NT$35.000 |
| 500+ | NT$28.950 |
| 1000+ | NT$26.720 |
| 5000+ | NT$24.590 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$79.79
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號CSD16321Q5
訂購代碼3009640
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
Drain Source On State Resistance2400µohm
Transistor Case StyleSON
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.1V
Power Dissipation3.1W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
產品總覽
The CSD16321Q5 is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for point-of-load synchronous buck converter for applications in networking, telecom and computing systems, optimized for synchronous FET applications.
- Optimized for 5V gate drive
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Plastic package
- -55 to 150°C Operating junction temperature range
應用
Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
SON
Rds(on) Test Voltage
4.5V
Power Dissipation
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
2400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.009979