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CSD86356Q5DT
Dual MOSFET, N Channel, 25 V, 25 V, 40 A, 40 A, 1800 µohm
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| 數量 | 價格 |
|---|---|
| 500+ | NT$46.580 |
| 1000+ | NT$41.070 |
價格Each (Supplied on Cut Tape)
最大可用數量為 459
最少: 500
多項: 1
NT$23,290.00
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產品訊息
製造商產品編號CSD86356Q5DT
訂購代碼2885447RL
Product RangeNexFET Series
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Continuous Drain Current Id40A
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel40A
On Resistance Rds(on)0.0018ohm
Continuous Drain Current Id P Channel40A
Drain Source On State Resistance N Channel1800µohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel1800µohm
Gate Source Threshold Voltage Max1.85V
Transistor Case StyleSON
Power Dissipation Pd12W
No. of Pins8Pins
Power Dissipation N Channel12W
Power Dissipation P Channel12W
Operating Temperature Max125°C
Product RangeNexFET Series
Qualification-
Automotive Qualification Standard-
技術規格
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id
40A
Continuous Drain Current Id N Channel
40A
Continuous Drain Current Id P Channel
40A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
1800µohm
Transistor Case Style
SON
No. of Pins
8Pins
Power Dissipation P Channel
12W
Product Range
NexFET Series
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Drain Source Voltage Vds P Channel
25V
On Resistance Rds(on)
0.0018ohm
Drain Source On State Resistance N Channel
1800µohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.85V
Power Dissipation Pd
12W
Power Dissipation N Channel
12W
Operating Temperature Max
125°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0001