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產品訊息
製造商產品編號HMC313ETR
訂購代碼4030261
技術資料表
Frequency Min0Hz
Frequency Max6GHz
Gain17dB
Noise Figure Typ6.5dB
Frequency Response RF Min0Hz
RF IC Case StyleSOT-26
Frequency Response RF Max6GHz
No. of Pins6Pins
Gain Typ17dB
Supply Voltage Min-
Supply Voltage Max5V
Operating Temperature Min-40°C
Operating Temperature Max85°C
IC Case / PackageSOT-26
Product Range-
SVHCNo SVHC (25-Jun-2025)
產品總覽
HMC313E is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operate from a single Vcc supply. It is used as a broadband gain stage or used with external matching for optimized narrow band applications. It is widely used in application such as 2.2 - 2.7GHz MMDS, 3.5GHz wireless local loop, 5 - 6GHz UNII & hiperLAN etc.
- Gain is 17dB typical
- Output third order intercept (IP3) is 27dBm typical at (1GHz)
- Single supply operation is 5V
- High reliability GaAs HBT process, frequency range is 6GHz typical
- Supply current is 50mA typical
- Noise figure is 6.5dB typical
- Operating temperature is -40 °C to +85°C
- Package style is 6-lead small outline transistor [SOT-23]
附註
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
技術規格
Frequency Min
0Hz
Gain
17dB
Frequency Response RF Min
0Hz
Frequency Response RF Max
6GHz
Gain Typ
17dB
Supply Voltage Max
5V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Frequency Max
6GHz
Noise Figure Typ
6.5dB
RF IC Case Style
SOT-26
No. of Pins
6Pins
Supply Voltage Min
-
Operating Temperature Min
-40°C
IC Case / Package
SOT-26
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85423390
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤):.000001