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ATF-54143-TR1G
RF FET Transistor, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343
不再生產
產品總覽
The ATF-54143-TR1G is a low noise enhancement mode Pseudomorphic HEMT in a surface mount plastic package. The combination of high gain, high linearity and low noise makes the HFET ideal for cellular/PCS base stations.
- Excellent uniformity in product specifications
- 800 Micron gate width
- Low noise figure
- High linearity performance
- Enhancement mode technology
應用
RF Communications
技術規格
Drain Source Voltage Vds
5V
Power Dissipation
725mW
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
120mA
Transistor Case Style
SOT-343
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00068